Transistor Persamaan Solenoid Module

Transistor Persamaan Solenoid Module Average ratng: 4,7/5 1041 votes

Sep 26, 2018  PLC transistor output response is fast, can be used for high-speed output, but control solenoid valve or need to add intermediate relay; relay output response is slow, but can save external relay, simple wiring. What output should be chosen depends on the load.Transistors are mainly used for position control, and they need to send pulses. In this tutorial we will be controlling a solenoid with an Arduino and a transistor. The solenoid we have picked for this tutorial is our Plastic Water Solenoid Valve (perfect for controlling flow to a drip irrigation system) but this tutorial can be applied to most inductive.

The working principle of PLC controlling the solenoid valve is that output module of PLC switch value is connected to the coil end of the solenoid valve. When the corresponding point of the module has a voltage output, the solenoid valve coil is powered on and the contacts are attracted. When there is no voltage output, the coil is powered off and the contacts separate.
Wiring diagram of PLC controlling a 24V solenoid valve via a relay
The figure below is a wiring diagram of PLC controlling a 24V solenoid valve with a 24V relay.
It shall be noted that if the PLC adopts the transistor output, COM of the output point shall be connected to the 0V. Then both transistor output and relay output are available.

PLC [COM] connects to the negative terminal of the relay. PLC [Y0] connects to the positive terminal of the relay. One end of solenoid valve is connected with the common end of relay contacts. Another end of solenoid valve is connected with the normally closed end of relay contacts.

Drive circuit of PLC controlling solenoid valve

1. For light emitting diodes (including optocoupler devices), its current-limiting resistance should be selected to ensure that the current of the diode is between 8 ~ 10mA. If the current is too small, the luminous brightness is low (not bright). The light coupling effect becomes worse for the photocoupler because of the low luminous brightness. Therefore, the 10K resistor in the diagram shall be 2 ~ 3KΩ.
2. If the 24V power supply of PLC is the same power supply as that of the solenoid valve, the optocoupler can be saved. And a sane circuit as the figure can be drawn, thus greatly simplifying the circuit and reducing the fault points.
We know from the diagram that a Mitsubishi PLC is selected. The PLC output circuit adopts the negative logic, namely: positive pole of the 24V power supply is connected with the COM public point, and the output switch (the relay contacts or transistor switches) is connected with the output interface (Yn) and the negative pole of the 24V power supply. In this way, the transistor adopted should be the PNP type, and a simple output circuit is formed as follows:

Optocoupler isolation is used in the scheme to protect PLC. When the solenoid valve is shorted, the protective resistor Ω22 may not be reliable, but the worst result is to burn out the switch tube TIP.
Change the circuit above into an amplifier, and then the output of PLC would not be burned out when the solenoid valve coil is short-circuited. The reason is that: R2 becomes the output load of PLC (10K) when short circuit occurs (current is only 2.4mA). By then, the excessive short-circuit current generated by the short-circuit coil will endanger the 24V power supply, and the following two circuits can be used to protect the power supply for over current and outage:
1. Connect the fuse RD in series in the circuit (refer to the left diagram). In case of a short-circuited coil, excessive current will disconnect RD and cut off power supply.
2. In G1, a resistance R4 is connected in series between the emitter and 24V power supply. Resistance value of R4 is equal to one tenth to one twentieth of the solenoid valve coil resistance. Then, a 24V relay is connected in parallel with R4, and R4 is then connected with the normally closed contact of J0 relay (see the right diagram below). In normal cases, Y0 = 1 (output = 0V), the G1 is conducted, voltage of R4 is about 1 ~ 2V, and voltage of the solenoid valve is 22 ~ 23V, so the solenoid valve can operate normally. J0 would not be attracted because of low voltage. If the solenoid valve coil is short circuited, the circuit becomes the emitter follower circuit: by then, voltage of J2 is 24V, J2 is attracted and its normally closed contact is disconnected. Cut off R4 to avoid the circuit to generate excessive current. Then close its normally open contact to send the signal for short circuited. The relay is used for protection because the coil short doesn’t occur frequently, so the service life of relay is not considered.

Type Designator: 2N7000

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage Vds : 60 V

Maximum Gate-Source Voltage Vgs : 40 V

Maximum Gate-Threshold Voltage Vgs(th) : 3 V

Maximum Drain Current Id : 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.7 nC

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO226

2N7000 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7000 Datasheet (PDF)

1.1. tsm2n7000kct.pdf Size:181K _update_mosfet

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)(Ω) ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ● Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

1.2. 2n7000r3.pdf Size:77K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29–04, STYLE 22 Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO–92 (TO–226AA) Gate–Source Voltage — Continuous VGS ±20 Vd

1.3. 2n7000-03.pdf Size:274K _philips

2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver

1.4. 2n7000 2n7002.pdf Size:626K _st

2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 ¦ Low Qg ¦ Low threshold drive SOT23-3L TO-92 Application ¦ Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectron

1.5. 2n7000bu.pdf Size:85K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous

Mosfet

1.6. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

1.7. 2n7000ta.pdf Size:84K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Contin

1.8. 2n7000.pdf Size:94K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and

1.9. 2n7000.pdf Size:443K _samsung

N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Curren

1.10. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free • ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lam

1.11. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Lo

1.12. 2n7000g.pdf Size:92K _onsemi

2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable 60 VOLTS • This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetiti

1.13. 2n7000z.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is part

1.14. 2n7000.pdf Size:355K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low volta

1.15. 2n7000k.pdf Size:201K _auk

2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packag

1.16. 2n7000.pdf Size:358K _secos

2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A

1.17. tsm2n7000.pdf Size:85K _taiwansemi

1.18. 2n7000k.pdf Size:67K _kec

2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H

1.19. 2n7000a.pdf Size:61K _kec

2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85

1.20. 2n7000.pdf Size:63K _kec

2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RA

1.21. 2n7000.pdf Size:199K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

1.22. 2n7000.pdf Size:239K _lge

2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 2

1.23. 2n7000.pdf Size:168K _wietron Download film one piece marineford sub indo.

WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source

1.24. h2n7000.pdf Size:51K _hsmc

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Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Tempera

1.25. st2n7000.pdf Size:566K _semtech

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) VDGR 60 V Gate-source Voltage Continuous VGS ± 20 V VGSM ± 40 V Non-repetitive ( tp ≤ 50 μs) Drain Current Continuous

1.26. h2n7000.pdf Size:423K _shantou-huashan

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

Datasheet: 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX, 2N6968JANTXV, 2N6969, 2N6969JANTX, 2N6969JANTXV, IRF630, 2N7000P, 2N7001, 2N7002, 2N7002L, 2N7004, 2N7005, 2N7006, 2N7007.




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